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ZXMN2A02N8
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
STATIC
I =250 A, V DS = V GS
Drain-Source   Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
20
0.7
1
100
0.02
0.04
V
A
nA
V
I D =250 μ A, V GS =0V
V DS =20V, V GS =0V
V GS = 12V, V DS =0V
D
V GS =4.5V, I D =11A
V GS =2.5V, I D =8.4A
Forward Transconductance
(1)(3)
g fs
27
S
V DS =10V,I D =11A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
1900
356
218
pF
pF
pF
V DS =10V, V GS =0V,
f=1MHz
SWITCHING
(2) (3)
Turn-On Delay Time
t d(on)
7.9
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tr
t d(off)
tf
Qg
Q gs
Q gd
10
33.3
13.6
18.9
5.2
4.9
ns
ns
ns
nC
nC
nC
V DD =10V, I D =1A
R G ? 6.0 Ω , V GS =4.5V
V DS =10V,V GS =4.5V,
I D =11A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.85
0.95
V
T J =25°C, I S =11.5A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
16.3
7.8
ns
nC
T J =25°C, I F =2.1A,
di/dt= 100A/ μ s
NOTES
(1) Measured under pulsed conditions. Width
300 μ s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 6 - FEBRUARY 2007
SEMICONDUCTORS
4
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